MODELING FILM AND VIA ELECTRICAL RESISTANCE FOR 3D STRUCTURES USING 3D-Films
نویسندگان
چکیده
This paper deals with the determination of film, via and contact structure resistances in VLSI metalization. Simulations of the flow of electrical current through thin metal films and VLSI structures using the three dimensional microstructural thin film simulation framework 3D-Films are discussed in this paper. For each simulation, the film structures are generated by the thin film growth model 3D-Films and then used to generate a finite difference based electrical model by the program 3D-Films/elec. This program creates a block based data structure using a 3D quadtree mesh and subsequently solves for the steady state electrical current flow through the film structure
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